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Memory ICs(ROM, PROM, EPROM, EEPROM, RAM, SRAM, DRAM, Flash).
- High speed—tAA = 25 ns- Low active power—1017 mW (max., 12 ns)- Low CMOS standby power —55 mW (max.), 4 mW (Low power version)- 2.0V Data Retention (Low power version)- Automatic power-down when deselected- TTL-compatible inputs and outputs- Easy memory expansion with CE1, CE2, and OE options Data Sheet : CY7C109.pdf 1 Lot of 750 pcs factory sealed...
Lot 2 CAT28C16AN-20 EEPROM 2K x 8 CMOS PLCC 32PIN CSI #A3233 2K x 8 bit CMOS PLCC EEPROM. Data Sheet : CAT28C16AN-20.pdf 2 pcs cut tape. CONDITION: NOS(NEW OLD STOCK)
128K x 8 1Mb SRAM. Features :· Single 5V 10% Power Supply· TTL Compatible Inputs and Outputs· I/O compatible with 3.3V device Reference Data Sheet : KM681002J-17.pdf
8K x 8 64Kb SRAM. Features :• Low-power standby— 0.1 mW (typ)— 10 μW (typ) L-/LL-version• Low power operation— 15 mW/MHz (typ)• Fast access time— l00/120/150 ns (max)• Single +5 V supply• Completely static memory— No clock or timing strobe required
Lot 5 M5M418125AJ-6 ,DRAM,EDO,128K x 8, 1M-bit,CMOS,SOJ,24PIN,Mitsubishi #B1352 128K x 8 bit EDO Page DRAM 60nS. 1 Lot of 5 pcs cut tape. CONDITION: NOS(NEW OLD STOCK)
UPD4516821AG5-A10-9NF LVTTL 2 x 1M x 8 16Mb Sync. DRAM TSOP 44-Pin NEC #H43377 2x1Mx2 16Mb Syncronous DRAM. 1 piece. CONDITION: NOS(NEW OLD STOCK)
2 pcs M5M41000BJ-10 DRAM 1Mbx1 100nS 5V 20p(26) MITSUBISHI #G21287 1M bit DRAM. Reference Data Sheet : M5M41000BJ-10.pdf 1 Lot of 2 pcs. CONDITION: NOS(NEW OLD STOCK)
128Kx8 NOR Flash Memory. FEATURES- High-Integration Blocked Architecture - One 8 KB Boot Block w/Lock Out - Two 4 KB Parameter Blocks - One 112 KB Main Block- 100,000 Erase/Program Cycles Per Block- Simplified Program and Erase
CXK58257AP-10LL 32K x 8 252Kb SRAM 100ns PDIP-28 Sony #E11566 32K x 8bit 100ns SRAM. Features :- Single 5V supply Reference Data Sheet : CXK58257AP-10LL 1 piece. CONDITION: NOS(NEW OLD STOCK)
64K x 8 SRAM. ■ Features :• Extended operating temperature range: –25 to +85°C• Fast access time: -10LLX 100ns (Max.)• Low standby current: 14μA (Max.)• Low data retention current: 12μA (Max.)• Single 3.3V supply: 3.3V ± 0.3V• Low voltage data retention: 2.0V (Min.)
256K x16 4Mb Pseudo Static RAM. Features :· 262,144 words ´ 16 bit organization· Power supply: +3.0 ± 0.15 V· Access time: 120 ns (MAX.)· Cycle time: 190 ns (MIN.)
8K x 8 64Kb SRAM. Features :· 8,192 ´ 8 bit organization· Access time: 500 ns (MAX.)· Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 mW (MAX.) @ 70°C @ 3 V 9 mW (MAX.) @ 85°C @ 3 V· Fully-static operation· Three-state outputs· Wide operating voltage range: 2.5 V to 5.5 V· TTL compatible I/O.