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Transistors and Field Effect Transistors(FET).
30V 15A N-Channel MOSFET - RoHS, NoPb. Features :- TrenchFET Power MOSFET- 100% Rg Tested
600V 2A N-Ch MOSFET. Features- Dynamic dV/dt Rating- Repetitive Avalanche Rated- Surface Mount (IRFRC20, SiHFRC20)- Available in Tape and Reel- Fast Switching- Ease of Paralleling
40V 200mA PNP Transistor Pair. Feature :• hFE, 100-300• Low VCE(sat), 3 0.4 V• Simplifies Circuit Design• Reduces Board Space
45V 100mA NPN Transistor. Feature :• Moisture Sensitivity Level: 1• ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V• AEC−Q101 Qualified and PPAP Capable
30V 11.5A N-Channel MOSFET. FEATURES- 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 4.5 V- Includes SyncFET Schottky body diode- Low gate charge (17nC typical)- High performance trench technology for extremely low RDS(ON) and fast switching- High power and current handling capability
• Epitaxial Planar Die Construction• Complementary NPN Type Available (MMBT2222A)• Ideal for Low Power Amplification and Switching
100V 700mA P-Channel MOSFET. Features :• Dynamic dv/dt rating• Repetitive avalanche rated• For automatic insertion• End stackable• Fast switching
300V 1A NPN Transistor. Features :• 250 V to 400 V (Min) − VCEO(sus)• 1 A Rated Collector Current• Popular TO−220 Plastic Package
12V 4A P-Channel MOSFET. FEATURES- –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V- RDS(ON) rated for use with 1.8 V logic- Low gate charge (13nC typical)